180 Gbit/s 4:1 power multiplexer for NRZ‐OOK signals with high output voltage swing in SiGe BiCMOS technology
نویسندگان
چکیده
منابع مشابه
A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW usin...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2020
ISSN: 0013-5194,1350-911X
DOI: 10.1049/el.2019.2557